1. Product Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting extraordinary atomic bond toughness.
The Si– C bond, with a bond power of around 318 kJ/mol, is among the greatest in structural ceramics, conferring outstanding thermal security, hardness, and resistance to chemical strike.
This durable covalent network results in a product with a melting factor going beyond 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical strength and creep resistance at temperatures above 1400 ° C, where many steels and standard ceramics start to soften or weaken.
Its reduced coefficient of thermal expansion (~ 4.0 Ă— 10 â»â¶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows quick thermal biking without tragic fracturing, a crucial feature for crucible performance.
These innate homes come from the well balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote an extremely secure and densely packed crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial function in longevity and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperatures above 2000 ° C, typically with boron or carbon additives to improve densification and grain limit cohesion.
This process yields a completely dense, fine-grained structure with minimal porosity (
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