Semiconductor chip structure is divided into substrate, epitaxy and device structure. Substrate usually plays a supporting role, and epitaxy is a specific film required by the device. The device structure is a topological structure with a certain circuit pattern processed by lithography etching and other processes. At present, the main forms of the third-generation semiconductor devices are silicon carbide – silicon carbide epitaxial power device and silicon carbide – gallium nitride epitaxial RF device.
It is worth noting that at present, most of the mainstream gallium nitride device companies use silicon carbide substrate, because the gallium nitride device based on silicon carbide substrate is better than the silicon substrate gallium nitride device performance, higher yield, more can reflect the advantages of a gallium nitride material.
To see, in the military field, GaN can be used for radar, electronic countermeasures, missiles and wireless communication, silicon carbide (SiC) is mainly used in jet engines, tank engines, ship engines; In the civil and commercial field, gallium nitride (GaN) is used in base stations, satellite communications, cable TV, mobile phone chargers and other small home appliances, while silicon carbide (SiC) is mainly used in electric vehicles, consumer electronics, new energy, rail transit, etc.
For example, gallium nitride RF devices based on silicon carbide have both the advantages of high thermal conductivity of silicon carbide and high power RF output of gallium nitride in a high-frequency band, breaking through the inherent defects of gallium arsenide and silicon-based LDMOS devices, and can meet the requirements of 5G communication for high-frequency performance and high power processing capacity. The silicon carbide-based gallium nitride RF device has gradually become the mainstream technology route of 5G power amplifier, especially the power amplifier of acer station. According to Yole, the silicon carbide substrate market will grow from $121 million in 2018 to $1.1 billion in 2024, with a compound growth rate of 44%. At this compound growth rate, the silicon carbide substrate market size will reach approximately $3.3 billion by 2027.
The third generation of semiconductors is in the early stage of development, and domestic and international giants are basically on the same starting line. This is an opportunity for China to catch up with foreign countries. In addition, the production line of the third generation of semiconductor technology requirements for equipment is low, so the third generation of semiconductor factory investment quota is only about one 5 of the first generation of silicon-based semiconductors, the difficulty, not equipment, not logic circuit design, but in the process, and technology development has the chance, compare logic chip difficulty is reduced, it is all good news for local companies.