Gallium Nitride powder GaN cas 25617-97-4

Feature of Gallium Nitride powder

GaN materials research and application of the current global semiconductor research front and hot, is the development of microelectronic devices, optoelectronic devices of new semiconductor materials.
It has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (almost no acid corrosion) and other properties and strong anti-radiation ability in optoelectronics, high temperature and high power devices and high Frequency microwave device applications has a broad prospect.

Item  Particle size purity formula weight melting point density
Tr-GaN  325mesh 3N 83.7297 1700¡æ 6.1g/mL,25/4¡æ

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